Manufacturer Part Number
MJD200T4G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
RoHS3 Compliant
DPAK Packaging
Operating Temperature: -65°C to 150°C (TJ)
Power Rating: 1.4 W
Breakdown Voltage (VCEO): 25 V
Collector Current (IC): 5 A
Collector-Emitter Saturation Voltage (VCE(sat)): 1.8 V @ 1 A, 5 A
DC Current Gain (hFE): Min 45 @ 2 A, 1 V
Transition Frequency (fT): 65 MHz
Product Advantages
Reliable performance in high-power, high-voltage applications
Compact and thermally efficient DPAK package
Suitable for a wide range of operating temperatures
Key Technical Parameters
Voltage Collector Emitter Breakdown (VCEO): 25 V
Current Collector (IC): 5 A
Current Collector Cutoff (ICBO): 100 nA
Transistor Type: NPN
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Amplifiers
Power Supplies
Motor Drives
Industrial Controls
Automotive Electronics
Product Lifecycle
This product is currently in active production and widely available.
Replacement or upgrade options are likely to be available for the foreseeable future.
Key Reasons to Choose This Product
Reliable high-power, high-voltage performance
Compact and thermally efficient DPAK package
Wide operating temperature range
Suitable for a variety of electronic applications
Manufactured to high quality and safety standards