MJD128T4G - onsemi

Manufacturer Part Number

MJD128T4G

Manufacturer

onsemi

Introduction

This product is a PNP Darlington transistor that is suitable for a wide range of applications, including power supplies, motor drives, and switching circuits.

Product Features and Performance

Power rating of 1.75W

Collector-Emitter breakdown voltage of 120V

Collector current rating of 8A

DC current gain of 1000 at 4A, 4V

Transition frequency of 4MHz

Operating temperature range of -65°C to 150°C

Product Advantages

High power handling capability

High current gain for efficient switching

Wide operating temperature range

Surface mount package for compact design

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 120V

Collector Current: 8A

DC Current Gain: 1000 @ 4A, 4V

Transition Frequency: 4MHz

Power Rating: 1.75W

Operating Temperature: -65°C to 150°C

Quality and Safety Features

RoHS3 compliant for environmental safety

Reliable DPAK package for robust performance

Compatibility

This transistor is suitable for a wide range of applications, including power supplies, motor drives, and switching circuits.

Application Areas

Power supplies

Motor drives

Switching circuits

Industrial electronics

Product Lifecycle

This product is currently in production and is not nearing discontinuation. Replacement or upgrade options are available from the manufacturer.

Key Reasons to Choose This Product

High power handling capability for demanding applications

High current gain for efficient switching

Wide operating temperature range for versatile use

Surface mount package for compact design

RoHS3 compliance for environmental safety

Reliable DPAK package for robust performance