KSA1010YTU - Fairchild Semiconductor

Manufacturer Part Number

KSA1010YTU

Manufacturer

Fairchild (onsemi)

Introduction

High-power PNP bipolar junction transistor (BJT) for general-purpose applications

Product Features and Performance

Capable of handling up to 7A of collector current

Rated for a maximum collector-emitter voltage of 100V

High DC current gain (hFE) of at least 100 at 3A collector current and 5V collector-emitter voltage

Low collector-emitter saturation voltage of 600mV at 500mA and 5A collector current

Suitable for high-power switching and amplification circuits

Product Advantages

Robust design for high-current and high-voltage applications

Excellent current handling and voltage-blocking capabilities

Optimal balance of performance and cost-effectiveness

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 100V

Collector Current (IC): 7A

Collector Cutoff Current (ICBO): 10A

DC Current Gain (hFE): Minimum 100 @ 3A, 5V

Collector-Emitter Saturation Voltage (VCEsat): 600mV @ 500mA, 5A

Quality and Safety Features

Tested and certified to meet industry standards for reliability and safety

Robust TO-220-3 package design for thermal management and mechanical stability

Compatibility

Suitable for use in a wide range of electronic circuits and applications

Application Areas

High-power switching and amplification circuits

Motor control and power electronics

Industrial and commercial equipment

Product Lifecycle

This product is currently in active production and widely available

No immediate plans for discontinuation, with ongoing support and availability of replacements or upgrades

Key Reasons to Choose This Product

Exceptional current handling and voltage-blocking capabilities

Excellent balance of performance, reliability, and cost-effectiveness

Proven track record in a wide range of high-power applications

Robust package design and quality assurance for long-term reliability