Manufacturer Part Number
KSA1013YBU
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Single Bipolar Junction Transistor (BJT)
Product Features and Performance
TO-92-3 and TO-226-3 package options
Operating temperature up to 150°C
Power rating of 900 mW
Collector-Emitter Breakdown Voltage up to 160 V
Collector Current (Ic) up to 1 A
Collector Cutoff Current (ICBO) up to 1 A
Low Collector-Emitter Saturation Voltage (Vce Sat) of 1.5 V @ 50 mA, 500 mA
PNP transistor type
DC Current Gain (hFE) of at least 60 @ 200 mA, 5 V
Transition Frequency of 50 MHz
Product Advantages
High voltage and current handling capability
Low saturation voltage for efficient power conversion
Wide operating temperature range
Key Technical Parameters
Manufacturer Part Number: KSA1013YBU
Package: TO-92-3, TO-226-3
Operating Temperature: 150°C (TJ)
Power Rating: 900 mW
Collector-Emitter Breakdown Voltage: 160 V
Collector Current (Ic): 1 A
Collector Cutoff Current (ICBO): 1 A
Collector-Emitter Saturation Voltage (Vce Sat): 1.5 V @ 50 mA, 500 mA
Transistor Type: PNP
DC Current Gain (hFE): 60 @ 200 mA, 5 V
Transition Frequency: 50 MHz
Quality and Safety Features
Robust TO-92-3 and TO-226-3 package options
Suitable for high-voltage and high-current applications
Compatibility
Through-hole mounting
Application Areas
Power supplies
Amplifiers
Switching circuits
Industrial controls
Product Lifecycle
This product is currently in production and availability is good.
Replacements and upgrades may be available, but the exact details should be confirmed with the manufacturer.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low saturation voltage for efficient power conversion
Wide operating temperature range
Robust package options suitable for demanding applications
Proven reliability and performance in a wide range of circuits and systems
KSA1013OTAonsemiTRANS PNP 160V 1A TO92-3