KSA1013YBU - onsemi

Manufacturer Part Number

KSA1013YBU

Manufacturer

onsemi

Introduction

PNP bipolar junction transistor (BJT)

Designed for general-purpose amplifier and switching applications

Product Features and Performance

Voltage rating up to 160V

Current rating up to 1A

Typical transition frequency of 50MHz

Low collector-emitter saturation voltage

High DC current gain (hFE) of at least 60

Product Advantages

Reliable and robust performance

Suitable for a wide range of applications

Efficient power handling capability

Cost-effective solution

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 160V

Collector Current (IC): 1A

DC Current Gain (hFE): 60 (min)

Transition Frequency (fT): 50MHz

Power Dissipation: 900mW

Operating Temperature: -55°C to +150°C

Quality and Safety Features

RoHS3 compliant

Meets industry quality and reliability standards

Compatibility

Through-hole mounting (TO-92-3 package)

Suitable for a variety of electronic circuit designs

Application Areas

General-purpose amplifier and switching applications

Power supplies

Audio equipment

Industrial controls

Consumer electronics

Product Lifecycle

This model is an active and widely available product

Replacement or upgrade options may be available from the manufacturer

Key Reasons to Choose This Product

Reliable and robust performance for a wide range of applications

Efficient power handling capability

Cost-effective solution

Meets industry quality and safety standards

Compatibility with various electronic circuit designs