Manufacturer Part Number
KSA1015YTA
Manufacturer
onsemi
Introduction
Discrete Semiconductor Bipolar Junction Transistor (BJT)
Product Features and Performance
High frequency operation up to 80 MHz
Low collector-emitter saturation voltage of 300 mV @ 10 mA, 100 mA
High DC current gain of 120 min @ 2 mA, 6 V
Power rating of 400 mW
Collector-emitter breakdown voltage of 50 V
Product Advantages
Robust and reliable performance
Suitable for high-frequency circuit designs
Efficient power handling capabilities
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 150 mA
Collector Cutoff Current: 100 nA
DC Current Gain (hFE): 120 min @ 2 mA, 6 V
Transition Frequency: 80 MHz
Power Dissipation: 400 mW
Operating Temperature: 150°C (TJ)
Quality and Safety Features
RoHS3 compliant
TO-92-3 formed leads package for through-hole mounting
Compatibility
TO-226-3, TO-92-3 (TO-226AA) package options
Application Areas
High-frequency amplifier circuits
Switching applications
Power supplies
Audio and radio frequency (RF) circuits
Product Lifecycle
This product is an active and widely available part from onsemi.
Replacements and upgrades may be available for this product.
Key Reasons to Choose This Product
High-frequency performance up to 80 MHz
Efficient power handling with 400 mW rating
Robust and reliable characteristics with high DC current gain
Versatile application in amplifier, switching, and RF circuits
RoHS3 compliance and through-hole mounting compatibility
KSA11420STUNA