Manufacturer Part Number
KSA1010YTU
Manufacturer
onsemi
Introduction
Discrete Semiconductor Transistor
PNP Bipolar Junction Transistor (BJT)
Product Features and Performance
High power handling capability up to 1.5W
High voltage rating up to 100V
High collector current up to 7A
High collector cutoff current up to 10A
Low collector-emitter saturation voltage (VCE(sat)) of 600mV @ 5A, 500mA
Wide operating temperature range up to 150°C
Product Advantages
Reliable and robust performance
Efficient power handling
Suitable for high power applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (BVCEO): 100V
Collector Current (IC): 7A
Collector Cutoff Current (ICBO): 10A
DC Current Gain (hFE): 100 @ 3A, 5V
Power Dissipation: 1.5W
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
TO-220-3 package for secure mounting and heat dissipation
Compatibility
Through-hole mounting
Compatible with various high power electronic circuits and applications
Application Areas
Power supplies
Motor controls
Industrial electronics
Automotive electronics
Product Lifecycle
Currently in production
No immediate plans for discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
High power handling capability
Reliable and robust performance
Efficient heat dissipation
Suitable for a wide range of high power applications
RoHS3 compliance for environmental responsibility
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