Manufacturer Part Number
FQPF7N80C
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, high-current N-channel MOSFET with low on-resistance and fast switching speed.
Product Features and Performance
800V drain-to-source voltage rating
9Ω maximum on-resistance at 3.3A, 10V gate-to-source voltage
6A continuous drain current at 25°C case temperature
56W maximum power dissipation at 25°C case temperature
Fast switching speed with low gate charge of 35nC at 10V gate-to-source voltage
Product Advantages
Suitable for high-voltage, high-current switching applications
Excellent efficiency due to low on-resistance
Reliable performance over wide temperature range (-55°C to 150°C)
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.9Ω @ 3.3A, 10V
Drain Current (Id): 6.6A @ 25°C
Power Dissipation (Pd): 56W @ 25°C
Input Capacitance (Ciss): 1680pF @ 25V
Quality and Safety Features
Robust TO-220 package with high thermal resistance
Suitable for industrial, automotive, and high-power applications
Compatibility
Compatible with a wide range of high-voltage, high-current power electronics circuits
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial automation equipment
Automotive electronics
Product Lifecycle
This product is an active, in-production component from Fairchild (onsemi).
Replacement or upgraded products may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent performance-to-cost ratio for high-voltage, high-current applications
Reliable and robust design for industrial and automotive use
Fast switching speed and low gate charge for efficient power conversion
Wide operating temperature range (-55°C to 150°C) for demanding environments
Proven track record and technical support from Fairchild (onsemi)
