Manufacturer Part Number
FQPF7P20
Manufacturer
onsemi
Introduction
High-performance P-Channel power MOSFET
Product Features and Performance
Drain-to-source voltage up to 200V
On-resistance as low as 690mΩ
Continuous drain current up to 5.2A
Low gate charge of 25nC
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent switching characteristics
Low power dissipation
Robust design for reliable operation
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 690mΩ
Continuous Drain Current (Id): 5.2A
Input Capacitance (Ciss): 770pF
Power Dissipation (Tc): 45W
Gate Charge (Qg): 25nC
Quality and Safety Features
RoHS3 compliant
TO-220F-3 package for reliable thermal performance
Compatibility
Suitable for a variety of power management and switching applications
Application Areas
Power supplies
Motor drives
Lighting systems
Industrial and consumer electronics
Product Lifecycle
Currently available, no plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent performance and efficiency
Robust and reliable design
Wide operating temperature range
Easy integration and compatibility
RoHS3 compliance for environmentally-conscious applications