Manufacturer Part Number
FQPF8N60CFT
Manufacturer
onsemi
Introduction
High-voltage, high-performance N-channel power MOSFET
Product Features and Performance
Optimized for high-voltage switching applications
Low on-resistance for high efficiency
Low gate charge for fast switching
Rugged design with high avalanche energy rating
Product Advantages
Excellent efficiency
Fast switching speed
High reliability
Key Technical Parameters
Drain to Source Voltage (Vdss): 600 V
Gate-to-Source Voltage (Vgs): ±30 V
On-Resistance (Rds(on)): 1.5 Ω @ 3.13 A, 10 V
Continuous Drain Current (Id): 6.26 A @ 25°C
Input Capacitance (Ciss): 1255 pF @ 25 V
Power Dissipation (Tc): 48 W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation (-55°C to 150°C)
Compatibility
TO-220-3 package
Suitable for through-hole mounting
Application Areas
High-voltage switching applications
Power supplies
Motor drives
Industrial electronics
Product Lifecycle
Currently available
No known plans for discontinuation
Key Reasons to Choose This Product
Excellent efficiency and fast switching speed
Robust design with high avalanche energy rating
Suitable for high-voltage, high-temperature applications
Proven reliability and performance from onsemi