Manufacturer Part Number
FQPF8N60C
Manufacturer
onsemi
Introduction
The FQPF8N60C is a high-voltage, high-current N-channel MOSFET from onsemi. It is designed for use in various power conversion and control applications.
Product Features and Performance
600V drain-to-source voltage
5A continuous drain current at 25°C
2Ω maximum on-resistance at 10V gate-to-source voltage
1255pF maximum input capacitance at 25V drain-to-source voltage
36nC maximum gate charge at 10V gate-to-source voltage
Wide operating temperature range of -55°C to 150°C
Product Advantages
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Compact TO-220F-3 package for easy integration
Suitable for a wide range of power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.2Ω @ 3.75A, 10V
Continuous Drain Current (Id): 7.5A at 25°C
Input Capacitance (Ciss): 1255pF @ 25V
Power Dissipation (Pd): 48W at 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Through-hole mounting
Compatible with various power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Converters
Industrial and consumer electronics
Product Lifecycle
The FQPF8N60C is an actively supported product by onsemi. There are no indications that it is nearing discontinuation, and replacement or upgrade options are available.
Key Reasons to Choose This Product
High voltage and current handling capabilities for demanding applications
Low on-resistance for efficient power conversion
Compact package for easy integration
Wide operating temperature range for versatile use
Designed and manufactured to high quality standards
Actively supported by the manufacturer with available replacement and upgrade options
FQPF7N90FC
FQPF8N60CYDTUonsemiMOSFET N-CH 600V 7.5A TO220F-3