FQPF8N80C - onsemi

Manufacturer Part Number

FQPF8N80C

Manufacturer

onsemi

Introduction

High-voltage N-channel MOSFET

Product Features and Performance

High drain-source breakdown voltage (800V)

Low on-resistance (1.55Ω @ 4A, 10V)

High continuous drain current (8A @ 25°C)

Wide operating temperature range (-55°C to 150°C)

Low gate charge (45nC @ 10V)

Fast switching speed

Product Advantages

Excellent power handling capability

High efficiency and low power loss

Reliable and robust performance

Suitable for high-voltage and high-current applications

Key Technical Parameters

Drain-Source Voltage (VDS): 800V

Gate-Source Voltage (VGS): ±30V

On-Resistance (RDS(on)): 1.55Ω @ 4A, 10V

Continuous Drain Current (ID): 8A @ 25°C

Input Capacitance (Ciss): 2050pF @ 25V

Power Dissipation (Pd): 59W @ Tc

Quality and Safety Features

RoHS3 compliant

TO-220F-3 package

Compatibility

Through-hole mounting

Application Areas

High-voltage power supplies

Switching power supplies

Motor drives

Industrial and consumer electronics

Product Lifecycle

Current product, no discontinuation planned

Replacement and upgrade options available

Several Key Reasons to Choose This Product

Excellent power handling and efficiency

Reliable and robust performance

Wide operating temperature range

Suitable for high-voltage and high-current applications

Cost-effective solution for power electronics designs