Manufacturer Part Number
FQPF7N80C
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET for use in power switching applications
Product Features and Performance
800V drain-to-source voltage rating
Low on-resistance of 1.9 ohm at 3.3A, 10V
Continuous drain current of 6.6A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1680 pF at 25V
Maximum power dissipation of 56W at 25°C case temperature
Product Advantages
Excellent switching performance
High voltage and current handling capability
Compact TO-220 package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.9 ohm @ 3.3A, 10V
Continuous Drain Current (Id): 6.6A @ 25°C
Quality and Safety Features
RoHS3 compliant
Reliable through-hole mounting
Compatibility
Suitable for use in power switching applications, such as power supplies, motor drives, and power conversion circuits
Application Areas
Power supplies
Motor drives
Power conversion circuits
Industrial and consumer electronics
Product Lifecycle
The FQPF7N80C is an active product and is not nearing discontinuation.
Replacements or upgrades may be available from onsemi.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for improved efficiency
Compact and reliable through-hole packaging
Wide operating temperature range for use in harsh environments
Excellent switching performance for power switching applications
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