Manufacturer Part Number
FQPF7N65C
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, high-performance MOSFET in TO-220 package
Product Features and Performance
Operating temperature range: -55°C to 150°C
Drain-to-source voltage (Vdss): 650 V
Maximum gate-to-source voltage (Vgs): ±30 V
Low on-resistance (Rds(on)): 1.4 Ω @ 3.5 A, 10 V
High current capability: 7 A continuous drain current (Id) at 25°C
Low input capacitance (Ciss): 1245 pF @ 25 V
High power dissipation: 52 W at Tc
N-channel MOSFET
Gate threshold voltage (Vgs(th)): 4 V @ 250 A
Recommended drive voltage: 10 V
Product Advantages
High voltage and current handling capability
Low on-resistance for improved efficiency
Compact TO-220 package
Key Technical Parameters
Drain-to-source voltage (Vdss): 650 V
Gate-to-source voltage (Vgs): ±30 V
On-resistance (Rds(on)): 1.4 Ω @ 3.5 A, 10 V
Continuous drain current (Id): 7 A at 25°C
Input capacitance (Ciss): 1245 pF @ 25 V
Power dissipation (max): 52 W at Tc
Quality and Safety Features
Industrial-grade component
Suitable for high-voltage, high-power applications
Robust design for reliable operation
Compatibility
Compatible with standard TO-220 mounting and thermal management solutions
Application Areas
Switch-mode power supplies
Motor drives
Lighting control
Industrial automation
Automotive electronics
Product Lifecycle
This product is not nearing discontinuation
Replacement and upgrade options available from the manufacturer
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for improved efficiency
Compact and robust TO-220 package
Suitable for a wide range of high-power, high-voltage applications
Reliable and long-lasting performance
Availability of replacement and upgrade options
