Manufacturer Part Number
FQPF7N65C
Manufacturer
onsemi
Introduction
High-voltage N-Channel enhancement-mode power MOSFET
Product Features and Performance
High blocking voltage of 650V
Low on-resistance of 1.4Ω
Continuous drain current of 7A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1245pF
Power dissipation of 52W
Product Advantages
High efficiency and power density
Reliable and robust performance
Suitable for high-voltage and high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.4Ω
Drain Current (Id): 7A
Input Capacitance (Ciss): 1245pF
Power Dissipation (Tc): 52W
Quality and Safety Features
RoHS3 compliant
TO-220F-3 package for reliable mounting and thermal management
Compatibility
Suitable for a wide range of high-voltage and high-power applications
Application Areas
Switching power supplies
Motor drives
Industrial and household appliances
Telecommunications equipment
Automotive electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power conversion
Reliable and robust performance over a wide temperature range
Suitable for high-power and high-voltage applications
RoHS3 compliance for environmental sustainability
FQPF7N65VBSEMI