Manufacturer Part Number
FQPF4N90
Manufacturer
Fairchild (onsemi)
Introduction
The FQPF4N90 is a Discrete Semiconductor Product that belongs to the Transistors - FETs, MOSFETs - Single small classification.
Product Features and Performance
RoHS3 Compliant
TO-220F-3 Manufacturer's Packaging
TO-220-3 Full Pack Package / Case
TO-220F-3 Supplier Device Package
QFET Series
Tube Packaging
Operating Temperature: -55°C to 150°C (TJ)
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30 V
Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 1.25 A, 10 V
MOSFET (Metal Oxide) Technology
Current Continuous Drain (Id) @ 25°C: 2.5 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Power Dissipation (Max): 47 W (Tc)
N-Channel FET Type
Vgs(th) (Max) @ Id: 5 V @ 250 A
Drive Voltage (Max Rds On, Min Rds On): 10 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Through Hole Mounting Type
Product Advantages
High drain to source voltage
Low on-resistance
High current capability
Wide operating temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 900 V
Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 1.25 A, 10 V
Current Continuous Drain (Id) @ 25°C: 2.5 A (Tc)
Power Dissipation (Max): 47 W (Tc)
Quality and Safety Features
RoHS3 Compliant
Wide operating temperature range: -55°C to 150°C (TJ)
Compatibility
Through Hole Mounting Type
Application Areas
Power supplies
Motor drives
Welding equipment
Induction heating
Other high-voltage, high-power applications
Product Lifecycle
The FQPF4N90 is currently available and not nearing discontinuation.
Replacements or upgrades may be available from Fairchild (onsemi).
Several Key Reasons to Choose This Product
High drain to source voltage of 900 V
Low on-resistance of 3.3 Ohm
High current capability of 2.5 A
Wide operating temperature range of -55°C to 150°C
RoHS3 compliant for environmental considerations
Compatibility with through hole mounting
