Manufacturer Part Number
FQPF4N90C
Manufacturer
onsemi
Introduction
The FQPF4N90C is a discrete N-channel MOSFET transistor designed for high-voltage switching applications.
Product Features and Performance
High drain-to-source voltage of 900V
Low on-resistance of 4.2Ω at 2A, 10V
Fast switching with input capacitance of 960pF at 25V
Capable of handling continuous drain current of 4A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Product Advantages
Suitable for high-voltage switching applications
Efficient power handling due to low on-resistance
Reliable performance across wide temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 900V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 4.2Ω @ 2A, 10V
Continuous Drain Current (Id): 4A @ 25°C
Input Capacitance (Ciss): 960pF @ 25V
Power Dissipation (Ptot): 47W @ 25°C case temperature
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Through-hole TO-220 package suitable for various circuit board designs
Application Areas
High-voltage switching applications
Power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and available
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
High voltage handling capability up to 900V
Low on-resistance for efficient power handling
Reliable performance across wide temperature range
Suitable for various high-voltage switching applications
