Manufacturer Part Number
FQPF4N80
Manufacturer
onsemi
Introduction
The FQPF4N80 is a high-voltage, N-channel power MOSFET suitable for use in a variety of power conversion and control applications.
Product Features and Performance
High breakdown voltage of 800V
Low on-state resistance of 3.6Ω at 1.1A and 10V
Low gate charge of 25nC at 10V
Wide operating temperature range of -55°C to 150°C
High continuous drain current of 2.2A at 25°C
Product Advantages
Excellent high-voltage performance
Efficient power conversion with low conduction losses
Reliable operation across a wide temperature range
Suitable for a variety of power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs): ±30V
On-State Resistance (Rds(on)): 3.6Ω @ 1.1A, 10V
Continuous Drain Current (Id): 2.2A @ 25°C
Input Capacitance (Ciss): 880pF @ 25V
Power Dissipation (Ptot): 43W @ Tc
Quality and Safety Features
Compliant with RoHS and REACH requirements
Designed and manufactured to high quality standards
Compatibility
The FQPF4N80 is a direct replacement for legacy MOSFET devices and can be used in a wide range of power conversion and control applications.
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial controls
Product Lifecycle
The FQPF4N80 is an actively supported product with no plans for discontinuation. Replacements and upgrades are available if required.
Key Reasons to Choose This Product
Excellent high-voltage performance with low on-state resistance
Wide operating temperature range for reliable operation
Efficient power conversion with low conduction losses
Suitable for a variety of power applications
Backed by onsemi's quality and reliability