Manufacturer Part Number
FQPF4N90
Manufacturer
onsemi
Introduction
N-channel MOSFET transistor
Product Features and Performance
High voltage (900V) capability
Low on-resistance (3.3Ω)
High current rating (2.5A)
Wide temperature range (-55°C to 150°C)
Low gate charge (30nC)
Low input capacitance (1100pF)
Product Advantages
Suitable for high voltage, high power applications
Efficient power conversion and control
Reliable operation in challenging environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 900V
Gate-to-Source Voltage (Vgs): ±30V
On-State Resistance (Rds(on)): 3.3Ω
Continuous Drain Current (Id): 2.5A
Input Capacitance (Ciss): 1100pF
Power Dissipation (Tc): 47W
Threshold Voltage (Vgs(th)): 5V
Quality and Safety Features
Robust TO-220F-3 package
Designed for reliable and safe operation
Compatibility
Through-hole mounting
Suitable for a variety of high voltage, high power applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial controls
Lighting ballasts
Inverters
Product Lifecycle
Current product offering
Availability of replacement or upgraded models
Key Reasons to Choose This Product
High voltage and current handling capabilities
Efficient power conversion with low on-resistance
Reliable performance in wide temperature range
Compact and robust package design
Suitable for a variety of high-power applications
FQPF4N60CFairchild (onsemi)