Manufacturer Part Number
FQPF4N80
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage N-channel MOSFET with low on-resistance designed for power switching applications.
Product Features and Performance
800V drain-to-source voltage rating
6Ω maximum on-resistance at 1.1A, 10V
2A continuous drain current at 25°C
880pF maximum input capacitance at 25V
43W maximum power dissipation at Tc
Product Advantages
Excellent high-voltage performance
Low on-resistance for high efficiency
High reliability and ruggedness
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Maximum Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 3.6Ω @ 1.1A, 10V
Continuous Drain Current (Id): 2.2A @ 25°C
Input Capacitance (Ciss): 880pF @ 25V
Power Dissipation (Pd): 43W @ Tc
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Suitable for use in various power switching applications.
Application Areas
Power supplies
Motor drives
Lighting ballasts
Industrial controls
Product Lifecycle
This product is currently in active production and availability is not an issue. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose this Product
Excellent high-voltage performance
Low on-resistance for high efficiency
High reliability and ruggedness
RoHS3 compliance
Wide operating temperature range
