Manufacturer Part Number
FQD12N20TM
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-Channel Power MOSFET
Product Features and Performance
High drain-source breakdown voltage
Low on-state resistance
Fast switching speed
Low gate charge
Suitable for high-frequency switching applications
Product Advantages
Efficient power conversion
Improved system reliability
Reduced power loss
Compact design
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
On-State Resistance (RDS(on)): 280mΩ
Continuous Drain Current (ID): 9A
Gate-Source Voltage (VGS): ±30V
Operating Temperature: -55°C to 150°C
Quality and Safety Features
Robust design for reliable performance
Meets relevant safety standards
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power amplifiers
Product Lifecycle
This product is an active and available part
Replacement or upgraded options may be available in the future
Key Reasons to Choose This Product
Excellent power handling capabilities
Efficient and reliable performance
Suitable for high-frequency, high-power applications
Easy integration into power electronics systems
Robust and durable design