Manufacturer Part Number
FQD12P10TM
Manufacturer
onsemi
Introduction
High voltage, low RDS(on) P-channel MOSFET for power management and conversion applications.
Product Features and Performance
High voltage capability up to 100V
Low on-resistance of 290mΩ @ 4.7A, 10V
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 800pF
Suitable for high-frequency switching applications
Product Advantages
Excellent performance-to-cost ratio
Robust design for reliable operation
Optimized for power management and conversion applications
Key Technical Parameters
Drain-Source Voltage (VDS): 100V
Gate-Source Voltage (VGS): ±30V
Continuous Drain Current (ID) at 25°C: 9.4A (Tc)
On-Resistance (RDS(on)): 290mΩ @ 4.7A, 10V
Input Capacitance (Ciss): 800pF @ 25V
Power Dissipation: 2.5W (Ta), 50W (Tc)
Quality and Safety Features
Qualified to AEC-Q101 automotive standards
RoHS and REACH compliant
Compatibility
Compatible with various power management and conversion applications
Application Areas
Power supplies
Motor drives
Inverters
Battery management systems
Product Lifecycle
This product is an active and widely available part from onsemi.
No immediate plans for discontinuation or replacement.
Key Reasons to Choose This Product
Excellent performance-to-cost ratio for power management and conversion applications
Robust design and wide operating temperature range for reliable operation
Optimized for high-frequency switching applications with low input capacitance
Qualified to automotive standards for quality and safety
