Manufacturer Part Number
FQD13N06LTM
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel MOSFET transistor suitable for a wide range of power conversion and control applications.
Product Features and Performance
60V drain-source voltage
115mΩ maximum on-resistance
11A continuous drain current at 25°C
Low input capacitance of 350pF
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge
Product Advantages
Excellent efficiency and thermal performance
Reliable and robust design
Versatile application in power electronics
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 115mΩ @ 5.5A, 10V
Continuous Drain Current (Id): 11A @ 25°C
Input Capacitance (Ciss): 350pF @ 25V
Power Dissipation: 2.5W (Ta), 28W (Tc)
Quality and Safety Features
Designed and manufactured to high quality standards
Suitable for use in safety-critical applications
Compatibility
Compatible with a wide range of power electronics circuits and systems
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
General power conversion and control
Product Lifecycle
Current product, no indication of discontinuation
Replacements and upgrades may be available
Key Reasons to Choose
High efficiency and reliability
Excellent thermal performance
Wide operating temperature range
Versatile application in power electronics
Robust and well-designed
FQD13N06LTM MOSFairchild (onsemi)