FQD13N06TM - onsemi

Manufacturer Part Number

FQD13N06TM

Manufacturer

onsemi

Introduction

High-performance N-channel MOSFET transistor with low on-resistance and high current handling capability.

Product Features and Performance

Low on-resistance (RDS(on) max = 140 mΩ @ 5 A, 10 V)

High continuous drain current (ID = 10 A @ 25°C)

Wide operating temperature range (-55°C to 150°C)

Fast switching speed

Low gate charge (Qg max = 7.5 nC @ 10 V)

Low input capacitance (Ciss max = 310 pF @ 25 V)

Product Advantages

Efficient power conversion and control

Suitable for high-current applications

Reliable operation in harsh environments

Compact and easy to integrate

Key Technical Parameters

Drain-Source Voltage (VDS): 60 V

Gate-Source Voltage (VGS): ±25 V

Threshold Voltage (VGS(th)): 4 V @ 250 A

Power Dissipation (PD): 2.5 W (Ta), 28 W (Tc)

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount applications

Compatibility

Compatible with various power electronic and control circuit designs.

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Converters

Automotive electronics

Product Lifecycle

The FQD13N06TM is an active and widely available product. Replacements and upgrades may be available, but the product is not nearing discontinuation.

Key Reasons to Choose This Product

Excellent performance in terms of on-resistance, current handling, and switching speed

Robust and reliable operation in challenging environments

Efficient power conversion and control

Easy integration into various power electronic designs

Availability and ongoing support from onsemi