Manufacturer Part Number
FQD13N06LTM
Manufacturer
onsemi
Introduction
Power MOSFET transistor
N-channel, enhancement-mode device
Product Features and Performance
Operates at up to 60V drain-to-source voltage
Low on-resistance (RDS(on)) of 115mΩ
High current capability of 11A continuous drain current
Low input capacitance (Ciss) of 350pF
Fast switching speed
Product Advantages
Excellent power efficiency
Compact surface-mount package
Wide operating temperature range (-55°C to 150°C)
RoHS3 compliant
Key Technical Parameters
Drain-to-Source Voltage (VDS): 60V
Gate-to-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 115mΩ
Drain Current (ID): 11A
Input Capacitance (Ciss): 350pF
Power Dissipation: 2.5W (Ta), 28W (Tc)
Quality and Safety Features
Designed to meet RoHS3 compliance
Robust TO-252AA package
Compatibility
Can be used in a variety of power switching and control applications
Application Areas
Power supplies
Motor drives
Switching regulators
Load switching
Battery chargers
Product Lifecycle
Current product offering
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
High efficiency and power density
Compact surface-mount package
Wide operating temperature range
Excellent thermal management
Reliable and robust design
RoHS3 compliance
FQD12P10TM-AS004PAMI Semiconductor/onsemi