Manufacturer Part Number
FQD12N20LTM-F085
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET designed for automotive and industrial applications.
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
Low on-resistance (RDS(ON)) of 280 mΩ at 4.5 A and 10 V
High drain-source voltage rating of 200 V
Low gate charge (Qg) of 21 nC at 5 V
Supports 5 V and 10 V drive voltages
Product Advantages
Excellent thermal management and power dissipation capabilities
Robust design for reliable performance in demanding applications
Optimized for automotive and industrial use cases
Key Technical Parameters
Drain-Source Voltage (VDS): 200 V
Gate-Source Voltage (VGS): ±20 V
Continuous Drain Current (ID): 9 A at 25°C
Input Capacitance (Ciss): 1080 pF at 25 V
Power Dissipation (PD): 2.5 W at Ta, 55 W at Tc
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
TO-252-3 (DPAK) package
Suitable for surface mount assembly
Application Areas
Automotive electronics (e.g., engine control, transmission, power steering)
Industrial power supplies and motor drives
General-purpose power switching applications
Product Lifecycle
Active product with no discontinuation plans
Replacement and upgrade options available from onsemi
Key Reasons to Choose This Product
High reliability and performance for demanding applications
Optimized for automotive and industrial use cases
Excellent thermal management and power dissipation capabilities
Robust design and AEC-Q101 qualification for reliable operation
Availability of replacement and upgrade options from the manufacturer