FQD12N20LTM - onsemi

Manufacturer Part Number

FQD12N20LTM

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

N-Channel MOSFET

Drain to Source Voltage (Vdss): 200 V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V

Current Continuous Drain (Id) @ 25°C: 9A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V

Power Dissipation (Max): 2.5W (Ta), 55W (Tc)

Vgs(th) (Max) @ Id: 2V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 5V, 10V

Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V

Product Advantages

High voltage and current capacity

Low on-resistance

High power dissipation

Key Technical Parameters

Transistor Type: N-Channel MOSFET

Drain to Source Voltage (Vdss): 200 V

Rds On (Max): 280mOhm

Continuous Drain Current (Id): 9A

Power Dissipation (Max): 55W

Quality and Safety Features

RoHS3 Compliant

Operating Temperature: -55°C ~ 150°C (TJ)

Compatibility

Mounting Type: Surface Mount

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Application Areas

Suitable for high voltage, high current power conversion and control applications

Product Lifecycle

Currently available

No information on discontinuation or replacements

Key Reasons to Choose This Product

High voltage and current capacity

Low on-resistance for efficient power conversion

High power handling capability

Wide operating temperature range