Manufacturer Part Number
FQD11P06TM
Manufacturer
onsemi
Introduction
This product is a P-channel MOSFET transistor from onsemi, designed for a wide range of power management and switching applications.
Product Features and Performance
60V Drain-Source Voltage
185mΩ Max On-Resistance at 4.7A, 10V
4A Continuous Drain Current at 25°C
550pF Max Input Capacitance at 25V
5W Power Dissipation at 25°C, 38W at Case Temperature
Operating Temperature Range: -55°C to 150°C
Product Advantages
Low on-resistance for efficient power conversion
High current handling capability
Compact TO-252AA package for surface mount applications
Suitable for a wide range of power management and switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 185mΩ @ 4.7A, 10V
Drain Current (Id): 9.4A @ 25°C
Input Capacitance (Ciss): 550pF @ 25V
Power Dissipation: 2.5W @ 25°C, 38W @ Case Temperature
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
This MOSFET is compatible with a wide range of power management and switching applications, including DC-DC converters, motor drives, and power supplies.
Application Areas
Power management circuits
Motor control
Power supplies
Switching applications
Product Lifecycle
This product is currently in production and widely available. There are no known plans for discontinuation, and suitable replacement or upgrade options are readily available.
Key Reasons to Choose This Product
High efficiency and low power loss due to low on-resistance
Robust design with high current handling and temperature capabilities
Compact surface mount package for space-constrained applications
Suitability for a broad range of power management and switching applications
Availability and long-term support from a reputable manufacturer, onsemi