Manufacturer Part Number
FQD12N20LTM
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Single N-Channel MOSFET Transistor
Product Features and Performance
TO-252, (D-Pak) Packaging
Surface Mount Mounting
Operating Temperature Range: -55°C to 150°C (TJ)
Drain to Source Voltage (Vdss): 200 V
Maximum Gate-Source Voltage (Vgs): ±20 V
On-State Resistance (Rds(on)): 280 mΩ @ 4.5 A, 10 V
Continuous Drain Current (Id): 9 A @ 25°C (Tc)
Input Capacitance (Ciss): 1080 pF @ 25 V
Power Dissipation: 2.5 W (Ta), 55 W (Tc)
Gate Charge (Qg): 21 nC @ 5 V
Product Advantages
Robust MOSFET design for high-voltage, high-current applications
Low on-state resistance for improved efficiency
Wide operating temperature range
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Threshold Voltage (Vgs(th)): 2 V @ 250 A
Drive Voltage: 5 V (Max Rds(on)), 10 V (Min Rds(on))
Quality and Safety Features
Complies with industry standards for reliability and safety
Compatibility
Suitable for a variety of high-voltage, high-current applications
Application Areas
Power supplies
Motor drives
Industrial electronics
Automotive electronics
Product Lifecycle
Currently available
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Robust and reliable MOSFET design
Low on-state resistance for improved efficiency
Wide operating temperature range
Suitable for a variety of high-power applications
Compliance with industry standards for quality and safety
FQD12N10 MOSFairchild (onsemi)