Manufacturer Part Number
FQD11P06TF
Manufacturer
onsemi
Introduction
This product is a P-channel MOSFET (metal-oxide-semiconductor field-effect transistor) device.
Product Features and Performance
Drain to Source Voltage (Vdss) of 60V
Maximum Gate-Source Voltage (Vgs) of ±30V
On-state Resistance (Rds(on)) of 185mΩ @ 4.7A, 10V
Continuous Drain Current (Id) of 9.4A at 25°C (Tc)
Input Capacitance (Ciss) of 550pF @ 25V
Power Dissipation of 2.5W (Ta) and 38W (Tc)
Gate Charge (Qg) of 17nC @ 10V
Product Advantages
Low on-state resistance for improved efficiency
High current handling capability
Wide operating temperature range of -55°C to 150°C
Suitable for surface mount applications
Key Technical Parameters
MOSFET technology
P-channel FET type
Threshold Voltage (Vgs(th)) of 4V @ 250A
Recommended drive voltage of 10V
Quality and Safety Features
Robust TO-252AA package
Suitable for high-reliability applications
Compatibility
Compatible with a variety of electronic systems and circuits requiring P-channel MOSFET devices
Application Areas
Switching and control circuits
Power management
Motor drives
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and available for purchase
Replacements or upgrades may become available in the future as technology advances
Key Reasons to Choose This Product
Excellent performance characteristics, including low on-state resistance and high current handling
Wide operating temperature range for versatile applications
Robust package and quality construction for reliability
Compatibility with a variety of electronic systems and circuits
FQD12N10Fairchild (onsemi)