Manufacturer Part Number
FDC6310P
Manufacturer
Fairchild (onsemi)
Introduction
High-performance P-channel PowerTrench MOSFET in a compact SuperSOT-6 package
Product Features and Performance
Dual P-channel MOSFET design
Low on-resistance (Rds(on)) of 125 mΩ
Continuous drain current (Id) of 2.2 A at 25°C
Logic level gate (Vgs(th) of 1.5 V)
Wide operating temperature range of -55°C to 150°C
Low input capacitance (Ciss) of 337 pF
Low gate charge (Qg) of 5.2 nC
Product Advantages
Compact and space-saving SuperSOT-6 package
Excellent thermal performance
High reliability and durability
Efficient power management
Key Technical Parameters
Drain to Source Voltage (Vdss): 20 V
On-Resistance (Rds(on)): 125 mΩ
Continuous Drain Current (Id): 2.2 A
Input Capacitance (Ciss): 337 pF
Gate Charge (Qg): 5.2 nC
Quality and Safety Features
Robust and reliable MOSFET design
Tested and certified for safety and performance
Complies with industry standards and regulations
Compatibility
Compatible with a wide range of electronic applications and systems
Application Areas
Power supplies
Motor controls
Battery management systems
General-purpose switching applications
Product Lifecycle
Current production model
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Compact and space-saving design
High reliability and durability
Versatile compatibility and wide application areas
Cost-effective and readily available