Manufacturer Part Number
FDC6312P
Manufacturer
onsemi
Introduction
The FDC6312P is a dual P-channel PowerTrench MOSFET in a SuperSOT-6 package, designed for use in various power management and switching applications.
Product Features and Performance
Dual P-channel MOSFET design
Low on-resistance (RDS(on) max of 115 mΩ)
Low gate charge (Qg max of 7 nC)
Wide operating temperature range of -55°C to 150°C
Capable of handling up to 2.3A continuous drain current
Product Advantages
Efficient power management due to low on-resistance
Compact SuperSOT-6 package for space-constrained designs
Robust thermal performance for high-power applications
Logic-level gate drive for easy integration with control circuits
Key Technical Parameters
Drain-to-Source Voltage (VDS): 20V
Continuous Drain Current (ID): 2.3A
On-Resistance (RDS(on)): 115 mΩ
Input Capacitance (Ciss): 467 pF
Gate Threshold Voltage (VGS(th)): 1.5V
Quality and Safety Features
RoHS3 compliant
Meets AEC-Q101 automotive qualification standards
Compatibility
Compatible with a wide range of power management and switching applications
Application Areas
Power management circuits
Switching power supplies
Motor control
Battery charging and discharging
General-purpose power switching
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacement or upgrade options may be available from onsemi, depending on the specific application requirements.
Several Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
Compact and thermally robust design for space-constrained applications
Logic-level gate drive for easy integration with control circuits
Broad operating temperature range for use in diverse environments
AEC-Q101 automotive qualification for reliability in demanding applications