Manufacturer Part Number
FDC6310P
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
ROHS3 Compliant
SuperSOT-6 Packaging
P-Channel MOSFET (Metal Oxide)
Dual Configuration
20V Drain to Source Voltage
125mOhm Max On-Resistance @ 2.2A, 4.5V
2A Continuous Drain Current @ 25°C
337pF Max Input Capacitance @ 10V
Logic Level Gate
5V Max Gate Threshold Voltage @ 250uA
2nC Max Gate Charge @ 4.5V
Surface Mount Mounting
Product Advantages
High power density
Low on-resistance
Logic level gate drive
Compact SuperSOT-6 package
Key Technical Parameters
Drain to Source Voltage: 20V
On-Resistance: 125mOhm max
Continuous Drain Current: 2.2A
Input Capacitance: 337pF max
Gate Threshold Voltage: 1.5V max
Gate Charge: 5.2nC max
Quality and Safety Features
ROHS3 Compliant
Operating Temperature: -55°C to 150°C
Compatibility
Compatible with various electronic circuits and systems requiring dual P-Channel MOSFET
Application Areas
Power management
Motor control
Switching circuits
General purpose amplification and switching
Product Lifecycle
Current production, no discontinuation planned
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
High power density in a compact package
Excellent low on-resistance performance
Logic level gate drive for easy control
Reliable operation over wide temperature range
Compliant with RoHS3 environmental standards
