Manufacturer Part Number
FDC6306P
Manufacturer
onsemi
Introduction
Dual P-Channel MOSFET transistor
Product Features and Performance
PowerTrench technology for efficient power handling
Low on-resistance (Rds(on)) of 170mOhm
High continuous drain current (Id) of 1.9A
Low input capacitance (Ciss) of 441pF
Logic level gate control (Vgs(th) of 1.5V)
Low gate charge (Qg) of 4.2nC
Product Advantages
Efficient power handling
Low on-resistance for low power loss
Compact surface mount package
Logic level gate control for easy driving
Key Technical Parameters
Drain-to-source voltage (Vdss): 20V
Max power dissipation: 700mW
Operating temperature range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Reliable SuperSOT-6 package
Compatibility
Compatible with various electronic circuits and systems
Application Areas
Power management circuits
Switching applications
General purpose electronic circuits
Product Lifecycle
Currently in production
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Efficient power handling with low on-resistance
Compact and reliable package
Flexible logic level gate control
Wide operating temperature range
Compliance with RoHS3 standards