Manufacturer Part Number
FDC6305N
Manufacturer
onsemi
Introduction
Dual N-Channel MOSFET
Optimized for power management applications
Product Features and Performance
Low on-resistance (80 mΩ typical)
High current capability (2.7 A continuous drain current)
Fast switching speed
Low gate charge (5 nC typical)
Low input capacitance (310 pF typical)
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Efficient power management
Compact design with small package size
Reliable and robust performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20 V
On-Resistance (Rds(on)): 80 mΩ @ 2.7 A, 4.5 V
Drain Current (Id): 2.7 A continuous @ 25°C
Gate Threshold Voltage (Vgs(th)): 1.5 V @ 250 μA
Input Capacitance (Ciss): 310 pF @ 10 V
Gate Charge (Qg): 5 nC @ 4.5 V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
Suitable for various power management applications
Application Areas
Power supplies
DC-DC converters
Motor drives
Battery management systems
Lighting control
General purpose switching
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
High efficiency and performance
Compact and space-saving design
Reliable and robust operation
Broad temperature range suitability
Compatibility with various power management applications
