Manufacturer Part Number
FDC6303N
Manufacturer
onsemi
Introduction
Dual N-Channel MOSFET transistor
Designed for high-performance, power-efficient applications
Product Features and Performance
Supports operating temperatures from -55°C to 150°C
Capable of handling up to 700mW of power
Low on-resistance (Rds(on)) of 450mΩ at 500mA, 4.5V
Input capacitance (Ciss) of 50pF at 10V
Logic level gate with threshold voltage (Vgs(th)) of 1.5V at 250μA
Gate charge (Qg) of 2.3nC at 4.5V
Product Advantages
Efficient power handling with low on-resistance
Suitable for a wide range of operating temperatures
Compact Surface Mount package (SOT-23-6 / TSOT-23-6)
Dual configuration for space-saving design
Key Technical Parameters
2 N-Channel MOSFET configuration
Drain-to-Source Voltage (Vdss) of 25V
Continuous Drain Current (Id) of 680mA at 25°C
Quality and Safety Features
RoHS3 compliant
Reliable performance in high-stress environments
Compatibility
Suitable for a variety of power management and control applications
Application Areas
Power management circuits
Motor control
Switching regulators
General-purpose amplifiers and switches
Product Lifecycle
Current model, no discontinuation or replacement planned
Several Key Reasons to Choose This Product
Efficient power handling with low on-resistance
Wide operating temperature range
Space-saving dual configuration
Reliable performance in demanding applications
FDC6305N MOSFairchild (onsemi)