Manufacturer Part Number
FDC6301N
Manufacturer
onsemi
Introduction
Dual N-Channel MOSFET transistor
Suitable for low-power switching and control applications
Product Features and Performance
700mW maximum power dissipation
Wide operating temperature range of -55°C to 150°C
Low on-resistance of 4Ω typical
Fast switching speed with low gate charge of 0.7nC
Logic-level gate drive capability
Product Advantages
Compact SuperSOT-6 package for space-efficient designs
Excellent thermal performance for reliable operation
Suitable for a variety of low-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 25V
Continuous Drain Current (Id): 220mA
Input Capacitance (Ciss): 9.5pF
Gate Threshold Voltage (Vgs(th)): 1.5V
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Rigorous quality control and testing
Compatibility
Compatible with a wide range of low-power electronic circuits and systems
Application Areas
Suitable for low-power switching and control applications, such as:
- Power supplies
- Motor controls
- Sensor interfaces
- General-purpose logic circuitry
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Compact and efficient package design
Excellent thermal performance and reliability
Suitable for a wide range of low-power applications
Competitively priced and widely available
