Manufacturer Part Number
FCPF11N65
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, high-power N-Channel MOSFET
Product Features and Performance
650V drain-source voltage
380mΩ maximum on-resistance
11A continuous drain current at 25°C case temperature
1490pF maximum input capacitance
36W maximum power dissipation
N-Channel MOSFET technology
5V maximum gate-source threshold voltage
Product Advantages
High-voltage and high-power capability
Low on-resistance for high efficiency
Suitable for high-power switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
On-Resistance (Rds(on)): 380mΩ
Continuous Drain Current (Id): 11A
Input Capacitance (Ciss): 1490pF
Power Dissipation (Pd): 36W
Gate-Source Threshold Voltage (Vgs(th)): 5V
Quality and Safety Features
Through-hole mounting
TO-220F package
Compatibility
Compatible with high-power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial and automotive electronics
Product Lifecycle
This product is an active and widely available part. No known discontinuation or replacement plans.
Key Reasons to Choose This Product
High voltage and current capability
Low on-resistance for high efficiency
Suitable for a wide range of high-power switching applications
Reliable and well-established product from a reputable manufacturer
Available in a standard and widely compatible TO-220F package