FCPF11N60NT - onsemi

Manufacturer Part Number

FCPF11N60NT

Manufacturer

onsemi

Introduction

The FCPF11N60NT is a high-performance N-Channel MOSFET transistor from onsemi, designed for a wide range of power electronics and switching applications.

Product Features and Performance

600V drain-to-source voltage rating

Low on-resistance of 299mOhm @ 5.4A, 10V

High current capability of 10.8A continuous drain current at 25°C

Fast switching speed with low input capacitance of 1505pF

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent power efficiency due to low on-resistance

Reliable high-voltage operation

Robust thermal performance

Suitable for high-frequency switching applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Gate-to-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 299mOhm @ 5.4A, 10V

Drain Current (Id): 10.8A continuous at 25°C

Input Capacitance (Ciss): 1505pF @ 100V

Power Dissipation (Pd): 32.1W at Tc

Quality and Safety Features

RoHS3 compliant

TO-220F-3 package for reliable thermal performance

Robust design for high reliability in harsh environments

Compatibility

Suitable for a wide range of power electronics and switching applications

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Industrial and consumer electronics

Product Lifecycle

Currently available

No plans for discontinuation

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent power efficiency and high power density

Reliable high-voltage operation

Robust thermal performance for demanding applications

Suitable for high-frequency switching

RoHS3 compliance for environmental responsibility