FCPF11N60F - onsemi

Manufacturer Part Number

FCPF11N60F

Manufacturer

onsemi

Introduction

High-voltage, high-current N-channel power MOSFET

Product Features and Performance

Low on-resistance for high efficiency

High avalanche energy capability

High-speed switching

Suitable for high-frequency applications

Rugged and reliable construction

Product Advantages

Optimized for high-frequency, high-power switching applications

Excellent thermal performance

Low gate charge for high-speed switching

Key Technical Parameters

Drain to Source Voltage (Vdss): 600V

Vgs (Max): ±30V

Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V

Current Continuous Drain (Id) @ 25°C: 11A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V

Power Dissipation (Max): 36W (Tc)

Vgs(th) (Max) @ Id: 5V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 10V

Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V

Quality and Safety Features

RoHS3 compliant

Robust and reliable construction

Compatibility

Suitable for a wide range of high-voltage, high-power switching applications

Application Areas

Switching power supplies

Motor drives

Inverters

Industrial and consumer electronics

Product Lifecycle

Currently available, no plans for discontinuation

Replacement or upgrade options available if needed

Key Reasons to Choose This Product

Optimized for high-frequency, high-power switching applications

Excellent thermal and electrical performance

Robust and reliable construction

Suitable for a wide range of applications

Availability of replacement and upgrade options