Manufacturer Part Number
FCPF099N65S3
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET with enhanced features and performance
Product Features and Performance
High breakdown voltage of 650V
Ultra-low on-resistance of 99mΩ
Continuous drain current of 30A at 25°C case temperature
Fast switching characteristics
Reliable and robust design
Product Advantages
Excellent power efficiency
Reduced power losses
Improved system reliability
Broad application suitability
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Maximum Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 99mΩ @ 15A, 10V
Continuous Drain Current (Id): 30A @ 25°C
Input Capacitance (Ciss): 2310pF @ 400V
Power Dissipation (Pd): 43W @ 25°C case temperature
Quality and Safety Features
RoHS3 compliant
Qualified to AEC-Q101 automotive standard
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of power conversion and motor control applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial and consumer electronics
Renewable energy systems
Product Lifecycle
Currently in active production
No plans for discontinuation
Potential upgrades or replacements available in the future
Key Reasons to Choose This Product
Excellent power efficiency and low power losses
Robust and reliable performance
Broad application suitability across various industries
Compliance with automotive and environmental standards
Potential for future upgrades or replacements