Manufacturer Part Number
FCPF13N60NT
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET with low on-resistance and fast switching characteristics.
Product Features and Performance
High voltage rating of 600V
Extremely low on-resistance (RDS(on) max = 258mΩ)
High continuous drain current (ID = 13A at 25°C)
Fast switching with low gate charge (Qg max = 39.5nC)
Wide operating temperature range (-55°C to 150°C)
Optimized for high-efficiency power conversion applications
Product Advantages
Excellent power efficiency due to low conduction losses
High power density and compact design
Reliable performance across wide temperature range
Fast, efficient switching for improved system response
Key Technical Parameters
Drain-Source Voltage (VDS): 600V
Gate-Source Voltage (VGS): ±30V
On-Resistance (RDS(on)): 258mΩ max
Continuous Drain Current (ID): 13A
Input Capacitance (Ciss): 1765pF max
Power Dissipation (Pd): 33.8W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Universal compatibility with applications requiring high-voltage, high-current N-channel MOSFET.
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Industrial automation and control
Solar inverters and renewable energy systems
Product Lifecycle
Current production, no plans for discontinuation
Availability of compatible replacement parts and upgrades
Key Reasons to Choose This Product
Excellent power efficiency and performance
Robust and reliable operation across wide temperature range
Fast, efficient switching for improved system response
High power density and compact design
Backed by onsemi's quality and technical support
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