ZXTP2012ZTA - Diodes Incorporated

Manufacturer Part Number

ZXTP2012ZTA

Manufacturer

Diodes Incorporated

Introduction

High-performance PNP bipolar junction transistor (BJT)

Suitable for general-purpose amplification and switching applications

Product Features and Performance

High current-handling capability up to 4.3A

High power dissipation up to 2.1W

Broad operating temperature range of -55°C to 150°C

High transition frequency of 120MHz

Product Advantages

Reliable and robust construction

Excellent thermal management

High efficiency and fast switching

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 60V

Collector Cutoff Current (Max): 20nA

Collector-Emitter Saturation Voltage (Max): 215mV

Current Gain (Min): 100 @ 2A, 1V

Quality and Safety Features

RoHS3 compliant

Suitable for lead-free and halogen-free manufacturing processes

Stringent quality control measures

Compatibility

Compatible with various surface mount packages, including SOT-89-3

Application Areas

General-purpose amplification and switching circuits

Power management and control systems

Industrial and consumer electronics

Product Lifecycle

Currently in active production

No plans for discontinuation announced

Several Key Reasons to Choose This Product

High current and power handling capabilities

Excellent thermal management and efficiency

Wide operating temperature range

Reliable and robust construction

Compatibility with various surface mount packages