Manufacturer Part Number
ZXTP2009ZTA
Manufacturer
Diodes Incorporated
Introduction
The ZXTP2009ZTA is a high-performance PNP bipolar transistor suitable for a wide range of applications, including power supplies, amplifiers, switches, and more.
Product Features and Performance
High power handling capability of up to 2.1W
Wide operating temperature range of -55°C to 150°C
High collector-emitter breakdown voltage of 40V
High collector current of up to 5.5A
Low collector-emitter saturation voltage of 185mV @ 550mA, 5.5A
High DC current gain of at least 200 @ 500mA, 2V
High transition frequency of 152MHz
Product Advantages
Excellent power handling and thermal management
Reliable and stable performance across wide temperature range
Suitable for high-current and high-voltage applications
Fast switching and high-frequency operation
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 40V
Current Collector (Ic) (Max): 5.5A
Current Collector Cutoff (Max): 20nA
Vce Saturation (Max) @ Ib, Ic: 185mV @ 550mA, 5.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency Transition: 152MHz
Quality and Safety Features
RoHS3 compliant
Manufactured in an ISO-certified facility
Robust package design for reliable operation
Compatibility
Surface mount package (SOT-89-3) for easy integration
Compatible with a wide range of electronic circuits and systems
Application Areas
Power supplies
Audio amplifiers
Switching circuits
Industrial controls
Automotive electronics
Product Lifecycle
Currently in active production
No plans for discontinuation
Upgrades and replacements available as needed
Key Reasons to Choose This Product
Excellent power handling and thermal performance
Wide operating temperature range for versatile applications
High current and voltage capabilities for demanding circuits
Fast switching and high-frequency operation
Reliable and stable performance
RoHS compliance for environmental sustainability