Manufacturer Part Number
ZXTP2008GTA
Manufacturer
Diodes Incorporated
Introduction
High-performance PNP bipolar junction transistor (BJT)
Designed for power management and control applications
Product Features and Performance
Wide operating temperature range: -55°C to 150°C
High power handling capability: 3W
High collector-emitter breakdown voltage: 30V
High collector current: 5.5A
High DC current gain: Minimum 100 @ 1A, 1V
High transition frequency: 110MHz
Product Advantages
Excellent power handling and thermal performance
Suitable for power management and control applications
Compact surface mount package (SOT-223-3)
Key Technical Parameters
Collector-Emitter Voltage (VCEO): 30V
Collector Current (IC): 5.5A
DC Current Gain (hFE): Minimum 100 @ 1A, 1V
Transition Frequency (fT): 110MHz
Power Dissipation (Pd): 3W
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Can be used in a wide range of power management and control applications
Application Areas
Power supplies
Motor drives
Lighting control
Industrial automation
Consumer electronics
Product Lifecycle
Currently in active production
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Exceptional power handling and thermal performance
High reliability and long-term durability
Compact and space-efficient surface mount package
Suitable for a wide range of power management and control applications
Availability of replacement or upgrade options