ZXTP2012GTA - Diodes Incorporated

Manufacturer Part Number

ZXTP2012GTA

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Product

Single Bipolar Junction Transistor (BJT)

Product Features and Performance

Operating Temperature Range: -55°C to 150°C

Power Handling Capability: 3W

Collector-Emitter Breakdown Voltage: 60V

Collector Current (Max): 5.5A

Collector Cutoff Current (Max): 20nA

Collector-Emitter Saturation Voltage: 250mV @ 500mA, 5A

DC Current Gain (hFE): 100 @ 2A, 1V

Transition Frequency: 120MHz

Product Advantages

Compact SOT-223-3 surface mount package

Robust performance across wide temperature range

High power and current handling capabilities

Suitable for a variety of power switching applications

Key Technical Parameters

Package: TO-261-4, TO-261AA

RoHS Compliance: RoHS3 Compliant

Manufacturer's Packaging: Tape & Reel (TR)

Quality and Safety Features

Reliable and durable construction

Compliance with relevant safety standards

Compatibility

Suitable for a wide range of electronic circuit designs requiring a PNP bipolar junction transistor

Application Areas

Power amplifiers

Switching regulators

Motor control circuits

Battery chargers

General-purpose power switching applications

Product Lifecycle

This is an active product, not nearing discontinuation

Suitable replacement or upgrade options available if needed

Key Reasons to Choose This Product

Excellent power and current handling capabilities

Wide operating temperature range

Compact surface mount package for space-constrained designs

Reliable and durable construction

Suitable for a variety of power switching applications