ZXTP2014GTA - Diodes Incorporated

Manufacturer Part Number

ZXTP2014GTA

Manufacturer

Diodes Incorporated

Introduction

High voltage, high power PNP transistor

Product Features and Performance

Operates at temperatures up to 150°C

Handles up to 4A of collector current

Achieves a collector-emitter breakdown voltage of 140V

Provides a transition frequency of 120MHz

Offers a DC current gain of at least 100 at 1A, 5V

Product Advantages

Suitable for high-voltage, high-power applications

Good thermal performance allows for use in harsh environments

Fast switching capabilities enable high-frequency operations

Key Technical Parameters

Power Rating: 3W

Collector-Emitter Breakdown Voltage: 140V

Collector Current (Max): 4A

Collector Cutoff Current (Max): 20nA

Collector-Emitter Saturation Voltage: 360mV @ 300mA, 3A

Transistor Type: PNP

DC Current Gain (hFE): 100 @ 1A, 5V

Transition Frequency: 120MHz

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount applications

Compatibility

Packaged in a SOT-223-3 case

Application Areas

Suitable for use in high-voltage, high-power applications such as power supplies, motor drives, and industrial controls

Product Lifecycle

This product is currently in production and no discontinuation is planned.

Key Reasons to Choose This Product

Excellent performance in high-voltage, high-power applications

Able to operate in harsh environments due to its wide temperature range

Fast switching capabilities enable use in high-frequency circuits

RoHS3 compliance and surface mount packaging make it suitable for modern electronics