Manufacturer Part Number
ZXTP2029FTA
Manufacturer
Diodes Incorporated
Introduction
High-voltage, high-current PNP bipolar junction transistor (BJT) in a small SOT-23-3 package.
Product Features and Performance
Capable of handling up to 3A of collector current
High voltage rating of up to 100V collector-emitter breakdown voltage
High transition frequency of 150MHz
Low collector-emitter saturation voltage of 250mV @ 400mA, 4A
Wide operating temperature range of -55°C to 150°C
Product Advantages
Compact and space-saving SOT-23-3 package
Suitable for high-power, high-speed switching and amplification applications
Excellent thermal dissipation characteristics
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 100V
Current Collector (Ic) (Max): 3A
Current Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 400mA, 4A
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency Transition: 150MHz
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Can be used in a wide range of electronic circuits and applications
Application Areas
High-power, high-speed switching and amplification circuits
Power management and control systems
Industrial and automotive electronics
Product Lifecycle
Current product offering, no discontinuation plans known
Several Key Reasons to Choose This Product
Capable of high current and voltage handling
Compact and space-saving SOT-23-3 package
Excellent thermal dissipation characteristics
Suitable for high-power, high-speed switching and amplification applications
Wide operating temperature range of -55°C to 150°C