ZXTP03200BGTA - Diodes Incorporated

Manufacturer Part Number

ZXTP03200BGTA

Manufacturer

Diodes Incorporated

Introduction

Discrete semiconductor product

Bipolar junction transistor (BJT) Single

Product Features and Performance

RoHS3 compliant

SOT-223-3 package

Wide operating temperature range: -55°C to 150°C

High power handling: up to 1.25W

High breakdown voltage: up to 200V

High collector current: up to 2A

Low collector-emitter saturation voltage: 275mV @ 400mA, 2A

High current gain: minimum 100 @ 1A, 5V

High transition frequency: 105MHz

Product Advantages

Suitable for high-power, high-voltage applications

Reliable performance across wide temperature range

Compact surface mount package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 200V

Collector Current (Max): 2A

Collector Cutoff Current (Max): 50nA

DC Current Gain (Min): 100 @ 1A, 5V

Transition Frequency: 105MHz

Power Dissipation (Max): 1.25W

Quality and Safety Features

RoHS3 compliant

Compatibility

TO-261-4, TO-261AA package options available

Application Areas

Power amplifiers

Motor drivers

Switching regulators

Industrial control systems

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacements or upgrades may be available in the future.

Key Reasons to Choose This Product

Reliable high-power, high-voltage performance

Wide operating temperature range

Compact surface mount package

Compliance with RoHS3 regulations

Availability of compatible package options