ZXTN618MATA - Diodes Incorporated

Manufacturer Part Number

ZXTN618MATA

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

RoHS3 Compliant

Tape & Reel (TR) packaging

Operating Temperature: -55°C to 150°C (TJ)

Power Rating: 1.5W

Collector-Emitter Breakdown Voltage (Max): 20V

Collector Current (Max): 4.5A

Collector Cutoff Current (Max): 25nA

Collector-Emitter Saturation Voltage (Max): 270mV @ 125mA, 4.5A

DC Current Gain (hFE) (Min): 200 @ 2A, 2V

Transition Frequency: 140MHz

Surface Mount Packaging

Product Advantages

High power handling capability

Low saturation voltage

High transition frequency

Compact surface mount package

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 20V

Current Collector (Ic) (Max): 4.5A

Current Collector Cutoff (Max): 25nA

Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A

DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V

Frequency Transition: 140MHz

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with various electronic circuits and applications that require a high-power bipolar junction transistor

Application Areas

Suitable for use in power amplifiers, switching circuits, and other high-power electronic applications

Product Lifecycle

Currently in production

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

High power handling capability up to 1.5W

Low saturation voltage for efficient performance

High transition frequency of 140MHz

Compact surface mount package for space-constrained designs

RoHS3 compliance for environmentally conscious applications